Chang-Liao, K.-S.K.-S.Chang-LiaoJENN-GWO HWU2018-09-102018-09-101991https://www.scopus.com/inward/record.uri?eid=2-s2.0-0026188024&doi=10.1016%2f0038-1101%2891%2990015-Q&partnerID=40&md5=f313931e88c26e953a6327c64121ac08http://scholars.lib.ntu.edu.tw/handle/123456789/292421The improvement of hot-carrier resistance and radiation hardness in n-channel MOSFETs by a novel technique is studied. This technique includes a Co-60 (1 M rad) irradiation and a subsequent anneal in N2 at 400°C for 10 min. The hot-carrier-induced instability and the radiation-induced degradation in MOSFETs are examined from the shifts of threshold voltage, transconductance, and drain current. It is observed that the sample after irradiation-then-anneal treatment shows more resistance to hot carrier and radiation damage than that without treatment. The effects are explained by a model involving strain relaxation induced near the SiO2/Si interface by irradiation. © 1991.Semiconductor Materials--Charge Carriers; Hot-carrier resistance; n-channel MOSFET; Semiconductor Devices, MOSFETjournal article10.1016/0038-1101(91)90015-Q2-s2.0-0026188024