W.-S. LourM.-K. TsaiK.-C. ChenS.-W. TanY.-W. WuYING-JAY YANG2018-09-102018-09-102002-0313869477http://scholars.lib.ntu.edu.tw/handle/123456789/299386https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036493049&doi=10.1016%2fS1386-9477%2802%2900238-2&partnerID=40&md5=5944654bd5142cbcfa65a08b5925243bp++-GaAs/n-InGaP heterojunction field-effect transistors (HJFETs) with a highly carbon-doped gate and a wide-gap channel were reported. A self-aligned T-shaped gate HJFET exhibits a gate of 0.6 μm in length by depositing gate metal of 1.0 μm. DC characteristics including a turn-on voltage of 2.0 V at 1 mA/mm, a gate-drain breakdown voltage up to 30 V, a drain-source breakdown voltage exceeding 25 V, a maximum available transconductance of 160 mS/mm and AC performances such as a unit-current gain frequency of 16.8 GHz, and a unit-power gain frequency of 25 GHz were obtained for a non-self-aligned HJFET. With a self-aligned processing structure, the transconductance and fmax were improved to 230 mS/mm and 35 GHz, respectively. © 2002 Elsevier Science B.V. All rights reserved.Heterojunction field-effect transistor; Self-aligned; T-shaped gateElectric breakdown of solids; Heterojunctions; Semiconducting indium gallium arsenide; Semiconductor doping; Transconductance; Heterojunction field-effect transistors (HJFET); Field effect transistorsjournal article10.1016/s1386-9477(02)00238-22-s2.0-0036493049WOS:000176869100195