High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf>

Lin, T.D.T.D.LinChang, W.H.W.H.ChangChu, R.L.R.L.ChuChang, Y.C.Y.C.ChangChang, Y.H.Y.H.ChangLee, M.Y.M.Y.LeeHong, P.F.P.F.HongChen, M.-C.M.-C.ChenKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272013https://scholars.lib.ntu.edu.tw/handle/123456789/443333High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf>journal article10.1063/1.48529752-s2.0-84891429666https://www.scopus.com/inward/record.uri?eid=2-s2.0-84891429666&doi=10.1063%2f1.4852975&partnerID=40&md5=faf18e1021bc5aea7dd447e64eee0f29