Sun, Chi-KuangChi-KuangSunChen, Yen-HungYen-HungChenShi, Jin-WeiJin-WeiShiChiu, Yi-JenYi-JenChiuGan, Kian-GiapKian-GiapGanBowers, John E.John E.Bowers2009-03-252018-07-062009-03-252018-07-06200300036951http://ntur.lib.ntu.edu.tw//handle/246246/148327https://www.scopus.com/inward/record.uri?eid=2-s2.0-0041376545&doi=10.1063%2f1.1595131&partnerID=40&md5=78c2c5a8f6610e7fbc5fbdb008045f6eElectron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 1017 cm-3.application/pdf53463 bytesapplication/pdfen-USElectric field effects; Gallium compounds; Scattering; Electron relaxation; Electrooptical effectsjournal article2-s2.0-0041376545http://ntur.lib.ntu.edu.tw/bitstream/246246/148327/1/49.pdf