Hsu N.-WHou W.-CChen Y.-YWu Y.-JKao H.-SHarris C.TLu T.-MJIUN-YUN LI2022-04-252022-04-25202200189383https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122871151&doi=10.1109%2fTED.2021.3138363&partnerID=40&md5=b6e4c716b15357e698174786c0021b92https://scholars.lib.ntu.edu.tw/handle/123456789/607224Capacitance-voltage ( {C} - {V} ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at {T}= {4} - {35} K are presented. Two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 \times 10^{{5}} cm2/ \text{V}\cdot \text{s} and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At {T}\,\,=35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant. ? 1963-2012 IEEE.C-V characteristicssurface tunnelingundoped Si/SiGe heterostructureCarrier concentrationCarrier mobilitySelenium compoundsSemiconductor quantum wellsSiliconSilicon compoundsTemperature distributionTwo dimensional electron gas2D electron gasCapacitance-voltage characteristicsCarrier transport propertiesCharge carrier densityQuantum-wellsSi/SiGe heterostructuresSurface tunnelingTemperature dependenceTunnelingUndoped si/sige heterostructure.Capacitancejournal article10.1109/TED.2021.31383632-s2.0-85122871151