Lee, Bor-LinBor-LinLeeLin, Ching-FuhChing-FuhLinLai, Jie-WeiJie-WeiLaiLin, WeiWeiLin2009-03-182018-07-062009-03-182018-07-06199800135194http://ntur.lib.ntu.edu.tw//handle/246246/145906https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032096975&doi=10.1049%2fel%3a19980838&partnerID=40&md5=98e3061d3b4f62902aa3281c09c5e838Carrier distribution in multiple quantum wells is studied. Nonuniform carrier distribution is evidenced by the lasing characteristics of laser diodes with multiple quantum wells of different widths. It is shown that the well sequence significantly influences the threshold current and the characteristic temperature owing to nonuniform carrier distribution.application/pdf268672 bytesapplication/pdfen-USCharge carriers; Electric currents; Thermal effects; Carrier distribution; Quantum well lasersjournal article2-s2.0-0032096975http://ntur.lib.ntu.edu.tw/bitstream/246246/145906/1/13.pdf