Y. H. KuoC. J. WuF. T. KuoYUNG-YAW CHENJIA-YUSH YEN2018-09-102018-09-102013-0301679317http://scholars.lib.ntu.edu.tw/handle/123456789/381410https://www.scopus.com/inward/record.uri?eid=2-s2.0-84870168701&doi=10.1016%2fj.mee.2012.08.012&partnerID=40&md5=9c80c8a5920f076a40b1050d1971ca7aA silicon-photodiode detector can be used to sense the position of the electron beam in a scanning-electron microscope. In order to validate the implementation of a electron beam drift detector, a silicon photodiode was constructed with a low profile and small working distance. The performance in detecting the drift of the electron beam over time was analyzed. It was also shown that a back scattered-electron image can be created with electron scanning, which allows the development of highly sensitive in situ beam position feedback in the electron-beam direct-write lithography system. © 2012 Elsevier B.V. All rights reserved.Back scattered electron; Electron detectors; Electron-beam drift; Electron-beam lithographyElectron beam lithography; Electron beams; Electron scattering; Lithography; Photodiodes; Scanning electron microscopy; Silicon; Back scattered electron image; Backscattered electrons; Beam positions; Electron beam direct write lithographies; Electron detectors; Image-based; Silicon photodiode; Working distances; Electronsjournal article10.1016/j.mee.2012.08.0122-s2.0-84870168701WOS:000314672300025