Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applications

Maikap, S.S.MaikapLee, H.Y.H.Y.LeeWang, T.-Y.T.-Y.WangTzeng, P.-J.P.-J.TzengWang, C.C.C.C.WangLee, L.S.L.S.LeeLiu, K.C.K.C.LiuYang, J.-R.J.-R.YangTsai, M.-J.M.-J.TsaiJER-REN YANG2020-05-122020-05-122007https://scholars.lib.ntu.edu.tw/handle/123456789/491632Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applicationsjournal article10.1088/0268-1242/22/8/0102-s2.0-34547422784https://www.scopus.com/inward/record.uri?eid=2-s2.0-34547422784&doi=10.1088%2f0268-1242%2f22%2f8%2f010&partnerID=40&md5=838190186e07f16ec727e2aa5c6c55d2