Huang Y.-CParimi VChang W.-CSyu H.-JSu Z.-CCHING-FUH LIN2021-09-022021-09-02202119430655https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102265793&doi=10.1109%2fJPHOT.2021.3064068&partnerID=40&md5=ad6031f416997b0647c06d75c01b0601https://scholars.lib.ntu.edu.tw/handle/123456789/580750In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated devices reach a high responsivity of 0.542 mA/W at 0-V bias. The investigation revealed that the rapid thermal annealing process could significantly influence the device characteristics. Variations in Schottky barrier height and series resistance of the photodetectors were also analyzed and correlated with the device responsivity. With proper conditions to improve the Pt/Si ohmic contact, the device performance can be enhanced. ? 2009-2012 IEEE.Electric resistance; Ohmic contacts; Photodetectors; Rapid thermal annealing; Rapid thermal processing; Schottky barrier diodes; Silicon; Device characteristics; Device performance; Internal photoemission; Rapid thermal annealing process; Schottky barrier heights; Schottky photodetectors; Series resistances; Telecommunication applications; Photons[SDGs]SDG7journal article10.1109/JPHOT.2021.30640682-s2.0-85102265793