Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applications

K.-T. ChenH.-Y. ChenC.-Y. LiaoG.-Y. SiangC. LoM.-H. LiaoK.-S. LiS. T. ChangM.-H. LeeMING-HAN LIAO2021-12-302021-12-302019https://scholars.lib.ntu.edu.tw/handle/123456789/590722Non-Volatile Ferroelectric FETs Using 5-nm HfZrO with High Data Retention and Read Endurance for 1T Memory Applicationsjournal article