Record Low Contact Resistivity (4.4¡?10-10 £[-cm2) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga

Lu, F.-L.F.-L.LuTsai, C.-E.C.-E.TsaiHuang, C.-H.C.-H.HuangYe, H.-Y.H.-Y.YeLin, S.-Y.S.-Y.LinCHEE-WEE LIU2021-02-222021-02-222019https://www.scopus.com/inward/record.url?eid=2-s2.0-85070314476&partnerID=40&md5=c3c0399f0563075e3f8d29fcc269f8e8https://scholars.lib.ntu.edu.tw/handle/123456789/549168Record Low Contact Resistivity (4.4¡?10-10 £[-cm2) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Gaconference paper10.23919/VLSIT.2019.87765812-s2.0-85070314476