A manufacturable high performance 0.1-μm pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICs

Tan, K.L.K.L.TanLiu, P.H.P.H.LiuStreit, D.C.D.C.StreitDia, R.R.DiaHan, A.C.A.C.HanFreudenthal, A.A.FreudenthalVelebir, J.J.VelebirStolt, K.K.StoltLee, J.J.LeeBiedenbender, M.M.BiedenbenderLai, R.R.LaiWang, H.H.WangAllen, B.B.AllenHUEI WANG2020-06-042020-06-041992https://scholars.lib.ntu.edu.tw/handle/123456789/497454A manufacturable high performance 0.1-μm pseudomorphic AlGaAs/InGaAs HEMT process for W-band MMICsconference paper10.1109/GAAS.1992.2472682-s2.0-0042111537https://www.scopus.com/inward/record.uri?eid=2-s2.0-0042111537&doi=10.1109%2fGAAS.1992.247268&partnerID=40&md5=aff34e1c6cd425024632dcfaefd5e4c1