A 3.5-GHz SiGe 0.35μm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integration

Kuo, C.-C.C.-C.KuoLin, P.-A.P.-A.LinKuo, J.-L.J.-L.KuoLu, H.-C.H.-C.LuHsin, Y.-M.Y.-M.HsinWang, H.H.WangHSIN-CHIA LU2018-09-102018-09-102011http://www.scopus.com/inward/record.url?eid=2-s2.0-84860523539&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/362973A 3.5-GHz SiGe 0.35μm HBT flip-chip assembled on ceramics integrated passive device Doherty power amplifier for SiP integrationconference paper