Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode

Yang, C.C.C.C.YangSu, Y.K.Y.K.SuLin, H.H.H.H.LinHAO-HSIUNG LIN2020-06-112020-06-112015https://scholars.lib.ntu.edu.tw/handle/123456789/500393Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diodejournal article10.1016/j.mejo.2015.08.0172-s2.0-84942025929https://www.scopus.com/inward/record.uri?eid=2-s2.0-84942025929&doi=10.1016%2fj.mejo.2015.08.017&partnerID=40&md5=b9163661c10589f1b5d09c90c8006f7c