Emission efficiency dependence on the p-gan thickness in a high-indium ingan/gan quantum-well light-emitting diode

Liao, C.-H.C.-H.LiaoChen, C.-Y.C.-Y.ChenChen, H.-S.H.-S.ChenChen, K.-Y.K.-Y.ChenChung, W.-L.W.-L.ChungChang, W.-M.W.-M.ChangHuang, J.-J.J.-J.HuangYao, Y.-F.Y.-F.YaoKiang, Y.-W.Y.-W.KiangCHIH-CHUNG YANGYEAN-WOEI KIANG2020-06-112020-06-112011https://scholars.lib.ntu.edu.tw/handle/123456789/497849Emission efficiency dependence on the p-gan thickness in a high-indium ingan/gan quantum-well light-emitting diodejournal article10.1109/LPT.2011.21692432-s2.0-80855139143https://www.scopus.com/inward/record.uri?eid=2-s2.0-80855139143&doi=10.1109%2fLPT.2011.2169243&partnerID=40&md5=4f72cb76296d2849c9b845e7ea4dd95b