High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxy

Lu, S.S.S.S.LuHuang, C.C.C.C.HuangSHEY-SHI LU2018-09-102018-09-101992http://www.scopus.com/inward/record.url?eid=2-s2.0-0026854515&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/298345[SDGs]SDG7High-Current-Gain Ga0.51In0.49P/GaAs Heterojunction Bipolar Transistor Grown by Gas-Source Molecular Beam Epitaxyjournal article10.1109/55.145025