2012-08-012024-05-15https://scholars.lib.ntu.edu.tw/handle/123456789/664929摘要：奈米級應變矽技術在近幾年受到廣泛注意, 除了應變在原子等級, 可以成功改變原子間距, 原子能量, 材料能階, 材料電子傳輸特性之外, 材料的光學性質, 例如: 能隙, 發光波長, 發光效率, 抗反射率等, 也均受到奈米級應力的影響, 故奈米應力目前被廣泛注意且使用在當今的半導體微機電元件以及光學元件上面. 本計畫為期三年, 涵蓋奈米應力的模擬, 理論分析, 材料性質改變, 以及最終光學響應的變化. 第一年期望藉由分析原子間距分析奈米應力源同時建立出適合的模擬模型, 第二年利用此應力材料特性分析其對於發光元件: 發光二極體的影響, 第三年利用此應力材料特性分析其對太陽能電池以及光偵測器的影響. 藉由此三年完整性計畫, 可以完整分析奈米應力從原子間距的改變對於最終材料能帶光學特性的關聯性, 進而對於光學元件效能的提升和光學特性的廣適用性具有重要的啟發性. 同時, 對於奈米級應力對於材料特性包含機械性質, 光學性質的改變也會有深入的學理探討.<br> Abstract: The light-emission efficiency in nano-level stress strained SiGe light-emitting diodes with nano-scale trench structure on the top surface can be enhanced about 10 times than it in the control planer device. The photonic crystal effect, the characteristics of the special wavelength extraction, is also observed successfully. The experimental data agree well with the theoretical surface plasma calculation. Besides the application of nano-level stress and nano-scale surface textured structure for the light-emitting diode, the nano-level stress and nano-textured Si solar cell are also observed and demonstrated to have the higher open-circuit voltage, short circuit current, and optic-electric transformation efficiency, due to the more light trapping, low reflection on the nano-textured surface, and more carriers collected in the larger n/p junction area. The solar cell efficiency can be improved about 2.9% (from 12% to 14.9%) by the designed nano-level stress with nano-surface structure. These experimental results prove that the dimension of the surface structure on the Si photonic device is worthy to continuously scale down to the nano-meter scale; even the current device structure is in the order of the micro-meter scale level. High performance Si-based optical devices with nano-stress modification make them attractive to be integrated with electronic Si chip for the future application.奈米應力矽光電半導體元件Nano-stress designSioptimal stress designSi optoelectronics