High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBE

Lin, Y.-S.Y.-S.LinLu, S.-S.S.-S.Lu2018-09-102018-09-101996http://www.scopus.com/inward/record.url?eid=2-s2.0-0030241695&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/324117[SDGs]SDG7High-breakdown-voltage Ga/sub 0.51/In/sub 0.49/P channel MESFET's grown by GSMBEjournal article10.1109/55.536290