National Taiwan University Dept Mat Sci & EngnSun, A.C.A.C.SunChen, S.C.S.C.ChenKuo, P.C.P.C.KuoChou, C.Y.C.Y.ChouFang, Y.H.Y.H.FangHsu, Jen-HwaJen-HwaHsuHuang, H.L.H.L.HuangChang, H.W.H.W.Chang2006-11-142018-06-282006-11-142018-06-282005-10http://ntur.lib.ntu.edu.tw//handle/246246/200611150121272Single-layer polycrystalline Fe52Pt48 alloy thin films were deposited on preheated natural-oxidized (100) silicon wafer b y conventional sputtering method at room temperature. The as-deposited films are soft fcc FePt phase. After suitable temperature annealing and furnace cooling, the as-deposited films are transformed from disordered soft fcc FePt phase into ordered fct 10 FePt phase. The ordering temperature of 10 FePt phase could be reduced to about 350 C by preheating substrate to 300 C followed by furnace cooling treatment. The grain size of FePt was found to decrease as the ordering temperature of 10 FePt phase was reduced. After annealing at 350 C for 1 h, the in-plane coercivity ( ) of the 100-nm Fe52Pt48 alloy thin film is about 6 kOe, and the average grain size is about 6 nm.application/pdf407768 bytesapplication/pdfzh-TWGrain sizeorder–disorder transformationssputtering.journal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121272/1/2413.pdf