Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectrics

Lin, T.D.T.D.LinChen, C.P.C.P.ChenChiu, H.C.H.C.ChiuChang, P.P.ChangLin, C.A.C.A.LinMINGHWEI HONGKwo, J.J.KwoTsai, W.W.Tsai2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443412Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al <inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd2O3) as gate dielectricsconference paper10.1109/DRC.2008.48007262-s2.0-58249102651https://www.scopus.com/inward/record.uri?eid=2-s2.0-58249102651&doi=10.1109%2fDRC.2008.4800726&partnerID=40&md5=d9d42a80b30d7046a49651f056936d6b