Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs

Huang, Chao-HsingChao-HsingHuangLee, Tsuen-LinTsuen-LinLeeLin, Hao-HsiungHao-HsiungLin2009-03-182018-07-062009-03-182018-07-061995https://www.scopus.com/inward/record.uri?eid=2-s2.0-0343048033&doi=10.1016%2f0038-1101%2894%2900296-R&partnerID=40&md5=7ee704957843bf675fc3017f09cd1f84From the Gummel plots of InAlAs/InGaAs/In0.52AlxGa0.48-xAs double heterojunction bipolar transistors (DHBTs), the relationship between the collector current and the density of the two-dimensional electron gas (2DEG) stored in the base-collector (B-C) heterojunction notch is found to be an exponential function which stems from the thermionic emission escaping process of the 2DEG. © 1995.application/pdf545575 bytesapplication/pdfen-USRelation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTsjournal article10.1016/0038-1101(94)00296-R2-s2.0-0343048033http://ntur.lib.ntu.edu.tw/bitstream/246246/145999/1/07.pdf