The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme design

M.-H. LiaoS. C. HuangC. Y. LiuP. G. ChenS. C. KaoC. LienMING-HAN LIAO2021-12-302021-12-302014https://scholars.lib.ntu.edu.tw/handle/123456789/590715美國夏威夷The demonstration of colossal magneto-capacitance and “negative” capacitance effect with the promising characteristics of Jg-EOT and transistor’s performance on Ge (100) n-FETs by the novel magnetic gate stack scheme designconference paper