CHEE-WEE LIUMIN-HUNG LEEMIIN-JANG CHENCHING-FUH LINMING-YAU CHERN2009-03-182018-07-062009-03-182018-07-06200007413106http://ntur.lib.ntu.edu.tw//handle/246246/145911http://ntur.lib.ntu.edu.tw/bitstream/246246/145911/1/19.pdfhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-0034504101&doi=10.1109%2f55.887479&partnerID=40&md5=27ba6452516a21c505a185170dc5b817An approximate two-order increase in magnitude in electroluminescence was observed for the metal-oxide-silicon tunneling diodes with oxide grown at 900 °C, as compared to 1000 °C. The x-ray reflectivity revealed that the oxide grown at 900 °C has rougher interface than that grown at 1000 °C. The role of interface roughness can be understood in a model composed of phonons and interface roughness. An external quantum efficiency of approximately 10-6 was obtained using Al electrodes.application/pdf57038 bytesapplication/pdfen-US[SDGs]SDG7Carrier mobility; Diodes; Electrodes; Electron tunneling; Light emitting diodes; MOS devices; Photolithography; Quantum efficiency; Silicon; Surface roughness; Metal oxide silicon diodes; Electroluminescencejournal article10.1109/55.8874792-s2.0-0034504101WOS:000165684000019http://ntur.lib.ntu.edu.tw/bitstream/246246/145911/1/19.pdf