A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam technique

Yang, C.-W.C.-W.YangChou, C.C.ChouChen, W.-C.W.-C.ChenHAO-HSIUNG LIN2020-06-112020-06-112018https://scholars.lib.ntu.edu.tw/handle/123456789/500394A single nano-void precisely positioned in SiO<inf>2</inf>/Si substrate by focused helium ion beam techniquejournal article10.1016/j.vacuum.2018.03.0292-s2.0-85044455513https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044455513&doi=10.1016%2fj.vacuum.2018.03.029&partnerID=40&md5=7fa7e0f426bb2e957b8d47315ec2a339