Ercan, EEErcanHsu, LCLCHsuLin, YCYCLinLin, BHBHLinWEN-CHANG CHEN2023-01-072023-01-0720222637-6105https://scholars.lib.ntu.edu.tw/handle/123456789/627014Photonic transistor memory has drawn extensive research attention owing to its noncontact programming capability, rapid data transmission, and low power consumption. In this research, a series of thermoresponsive poly(fluorene)-block-poly(N-isopropylacrylamide) (PF-b-PNIPAAm) with varied compositions were employed as an electret layer for photomemory application. Accordingly, the device presented ambipolar charge trapping with a decent memory ratio of ∼105 and a large memory window of ∼30 V by applying electrical and photoprogramming. More importantly, the photomemory exhibited a higher data retention stability at 40 °C, which was attributed to the conformational reorganization of PF-b-PNIPAAm at a temperature over its lower critical solution temperature. Finally, the phototransistor was modulated as a photosynapse to emulate fundamental functions, including the short-term and long-term plasticity. This research opens up possibilities in polymer-based memory under photo-/thermal-operations to realize human-like optical processing for neuromorphic computing systems.computing systems; photomemory; artificial synapse; poly(N-isopropylacrylamide) (PNIPAAm); field-effect transistor (FET); lower critical solution temperature (LCST); TRANSISTOR MEMORY; PERFORMANCE; MORPHOLOGYjournal article10.1021/acsapm.2c015922-s2.0-85144505287WOS:000898919600001https://api.elsevier.com/content/abstract/scopus_id/85144505287