Yu, C.C.C.C.YuLiou, Y.Y.LiouTsai, C.S.C.S.TsaiChen, M.J.M.J.ChenChiu, B.S.B.S.ChiuHung, D.S.D.S.HungChang, J.F.J.F.ChangLee, S.F.S.F.LeeYao, Y.D.Y.D.YaoMIIN-JANG CHEN2020-05-122020-05-12200200189464https://scholars.lib.ntu.edu.tw/handle/123456789/491809Single-layer Fe films 800 Å thick, with and without a 10-Å-thick Ag buffer layer, were prepared at various growth temperature, Tg, on GaAs(001) substrates by molecular-beam epitaxy. For Tg around 200 °C, high-quality single crystal films were obtained without the Ag buffer layer. For Tg ≦ 100 °C, a defect structure was observed in the iron layer. However, the addition of an ultrathin Ag buffer layer between GaAs and Fe has the desirable effects of eliminating the defect structure and significantly enhancing the FMR absorption.FMR absorption; MBE; Surface defects; Tunable microwave band-stop filter; Ultrathin iron-silver filmAbsorption; Ferromagnetic resonance; Gallium compounds; Iron; Magnetic filters; Molecular beam epitaxy; Single crystals; Ultrathin films; Tunable microwave band-stop filters; Magnetic thin filmsjournal article10.1109/TMAG.2002.8024862-s2.0-0036762579https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036762579&doi=10.1109%2fTMAG.2002.802486&partnerID=40&md5=14b53ce9fcf45e4e2a615a869bf2d662