HSUEN-LI CHENCheng H.-CKo F.-HChu T.-CHuang T.-Y.2022-11-162022-11-16200200214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036614577&doi=10.1143%2fjjap.41.4046&partnerID=40&md5=2d6ce1abaabb5f6880483db75ded866ehttps://scholars.lib.ntu.edu.tw/handle/123456789/625367In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described.ArF lithography; Bottom antireflective coatings; KrF lithography; Low-dielectric constant materials; SiLKAntireflection coatings; Etching; Fluorine compounds; Interfaces (materials); Light reflection; Masks; Permittivity; Polymers; Substrates; Thermodynamic stability; Metal interconnects; Photolithographyjournal article10.1143/jjap.41.40462-s2.0-0036614577