Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor

Yang, C.-F.C.-F.YangChen, B.-J.B.-J.ChenChen, W.-C.W.-C.ChenLin, K.-W.K.-W.LinJENN-GWO HWU2021-05-052021-05-052019https://www.scopus.com/inward/record.url?eid=2-s2.0-85057188985&partnerID=40&md5=69a3bc575b25bab107f52d3af9890a88https://scholars.lib.ntu.edu.tw/handle/123456789/559026Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistorjournal article10.1109/TED.2018.28796542-s2.0-85057188985