The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channel

Lee, C.-C.C.-C.LeeHsu, H.-W.H.-W.HsuLiao, M.-H.M.-H.LiaoMING-HAN LIAO2020-01-132020-01-132017https://scholars.lib.ntu.edu.tw/handle/123456789/447948The effect of CESL and dummy poly gate for n-type MOSFETs with short Si<inf>0.75</inf>Ge<inf>0.25</inf> channeljournal article10.1016/j.vacuum.2016.08.0092-s2.0-85002729652https://www.scopus.com/inward/record.uri?eid=2-s2.0-85002729652&doi=10.1016%2fj.vacuum.2016.08.009&partnerID=40&md5=099bfdb572f232e9560c053c8ef1bc58