Cheng, C.-H.C.-H.ChengLin, G.-R.G.-R.LinLinGONG-RU LIN2020-06-112020-06-112015https://scholars.lib.ntu.edu.tw/handle/123456789/500311All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively. © 2015 IEEE.[SDGs]SDG7Open circuit voltage; Silanes; Silicon carbide; Solar power generation; Absorbances; Absorption co-efficient; Composition ratio; Filling factor; Fluences; Photovoltaic solar cells; Silicon rich; Visible light region; Silicon solar cellsconference paper10.1109/ISNE.2015.71319922-s2.0-84939457270https://www.scopus.com/inward/record.uri?eid=2-s2.0-84939457270&doi=10.1109%2fISNE.2015.7131992&partnerID=40&md5=8933e9714402bb6ec3e790af0267bbc5