Chen S.-SJAMES-B KUO2023-06-092023-06-091995214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0029540390&doi=10.1143%2fJJAP.34.6340&partnerID=40&md5=d0c9ec171c09f5cf92c81659cdaed291https://scholars.lib.ntu.edu.tw/handle/123456789/632465This paper reports a concise short-channel effect model for inversion-type ultrathin silicon-on-insulator (SOI) metal-oxide-silicon field-effect transistors (MOSFETs). As verified by the 2D simulation data, the concise short- channel effect model based on partitioning of the thin-film region provides a good prediction. According to the analytical model, the short-channel effect is strongly influenced by its thin-film thickness. © 1995 The Japan Society of Applied Physics.Field-effect transistor; Metal-oxide-silicon; Short-channel effect; Silicon-on-insulator; Thin-filmComputer simulation; Gates (transistor); Semiconductor device models; Silicon on insulator technology; Thin films; Concise short channel effect model; Inversion type ultrathin silicon on insulator; Metal oxide silicon; Partitioning; Poisson equations; Short channel effect; Thin film thickness; Two dimensional simulation data; MOSFET devicesjournal article10.1143/JJAP.34.63402-s2.0-0029540390