Ga2O3 (Gd2O3) / Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

Zheng, J.F.J.F.ZhengTsai, W.W.TsaiLin, T.D.T.D.LinLee, Y.J.Y.J.LeeChen, C.P.C.P.ChenMINGHWEI HONGKwo, J.J.KwoCui, S.S.CuiMa, T.P.T.P.Ma2019-12-272019-12-272007https://scholars.lib.ntu.edu.tw/handle/123456789/443431Ga2O3 (Gd2O3) / Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversionjournal article10.1063/1.28177422-s2.0-36549063375https://www.scopus.com/inward/record.uri?eid=2-s2.0-36549063375&doi=10.1063%2f1.2817742&partnerID=40&md5=19b0ad058f7ba4f7a7fa2978b24ac547