Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode

Lin, Y.-K.Y.-K.LinLin, L.L.LinHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102014http://www.scopus.com/inward/record.url?eid=2-s2.0-84904764548&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/385262Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diodejournal article10.1149/2.019406jss