Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Reply

Lee, Y.-J.Y.-J.LeeYang, Z.-P.Z.-P.YangChen, P.-G.P.-G.ChenHsieh, Y.-A.Y.-A.HsiehYao, Y.-C.Y.-C.YaoLiao, M.-H.M.-H.LiaoLee, M.-H.M.-H.LeeWang, M.-T.M.-T.WangHwang, J.-M.J.-M.HwangMING-HAN LIAO2020-01-132020-01-132018https://scholars.lib.ntu.edu.tw/handle/123456789/447946Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: Replyjournal article10.1364/OE.26.00A1102-s2.0-85040933595https://www.scopus.com/inward/record.uri?eid=2-s2.0-85040933595&doi=10.1364%2fOE.26.00A110&partnerID=40&md5=6ed5db450c7c29cdae38585754736bbf