Wang L.-M., Wang S.-H., Shen D., Yang T.-W., Chen I.-N.Wang S.-H., Shen D., Yang T.-W., Chen I.-N.Wang L.-M.LI-MIN WANG2021-07-282021-07-28202013672630https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081135206&doi=10.1088%2f1367-2630%2fab6063&partnerID=40&md5=069a632b9e97dd80081b71cf396d38cbhttps://scholars.lib.ntu.edu.tw/handle/123456789/573705Magnetotransport properties with a large positive magnetoresistance (MR) and a high carrier mobility for applications have been achieved and probed for quenched Fe0.01Bi2Te3 single crystals. Large positive MR of ?470% with a Hall mobility of ?44 000 cm2 V-1 s-1 at 5 K and 6 T has been observed on a quenched Fe0.01Bi2Te3 sample, in which the electrical parameters can be tuned by the quenching temperature Tq. The MR behaviors for the quenched samples show a crossover from a weak antilocalization-dominant MR to a linear and non-saturating MR at temperatures of T? ? 58-100 K, where the large MR at low temperatures possibly originates from the mechanism of topologically protected backscattering. On the contrary, the MR behaviors for the strain-released sample do not show such a distinct crossover, where only linear-like and non-saturating MR behaviors can be observed. Different electrical transports between the quenched and strain-released samples indicate that the band structure, as well as the surface Dirac electrons in Fe0.01Bi2Te3, can be modified by the lattice strain. Furthermore, it is found that the low-temperature magnetoconductivity can be well described by the weak-antilocalization transport formula, while the high-field linear-like MR at T > T? can be explained in terms of Abrikosov's quantum transport of Dirac-cone states in quenched Fe0.01Bi2Te3 single crystals. ? 2020 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft.Bismuth compounds; Iron compounds; Magnetoresistance; Quantum chemistry; Quantum theory; Single crystals; Tellurium compounds; Temperature; Topological insulators; Electrical parameter; Electrical transport; High carrier mobility; Magneto transport properties; Magneto-conductivity; Positive magnetoresistance; Quenching temperatures; Weak antilocalization; Hall mobilityjournal article10.1088/1367-2630/ab60632-s2.0-85081135206