High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °C

Cheng, I.-C.I.-C.ChengWagner, S.S.WagnerI-CHUN CHENG2018-09-102018-09-102003http://www.scopus.com/inward/record.url?eid=2-s2.0-0037416546&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303208High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 °Cjournal article10.1016/S0040-6090(02)01243-9