Cheng, Shih-HungShih-HungChengSyu, Yi-RueiYi-RueiSyuHsieh, Er-FengEr-FengHsiehWEN-JENG HSUEH2026-01-152026-01-152026-01-1509258388https://www.scopus.com/record/display.uri?eid=2-s2.0-105025160372&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/735354The growing demand for high-speed and low-power electronic devices, particularly in artificial intelligence and Internet of Things applications, calls for next-generation memory technologies that overcome the limitations of conventional memory. Two-dimensional materials have emerged as promising candidates for future memory and three-dimensional integrated circuit systems due to their superior electronic properties and scalability. In this work, we propose a gate-tunable spin valve based on transition metal dichalcogenides (TMDs) that achieves both high read and write performance at room temperature under phonon scattering conditions. A tunneling magnetoresistance exceeding 3000 % is realized in the gated reading mode, while an ungated configuration yields a spin current density of 30 MA/cm², enabling fast and energy-efficient write operations. Moreover, the gate-tunable architecture effectively suppresses undesired overlap between reading and writing, ensuring stable memory operation. These results highlight the potential of TMD-based spintronic devices for high-performance memory applications.false2D materialsMagnetoresistancePhonon scatteringSpin valveSpin-transfer torqueTransition metal dichalcogenidesjournal article10.1016/j.jallcom.2025.1856822-s2.0-105025160372