MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses

Dept. of Electr. Eng., National Taiwan Univ.Hsu, B.C.B.C.HsuChang, S.T.S.T.ChangKuo, P.S.P.S.KuoChen, P.S.P.S.ChenLiu, C.W.C.W.LiuLu, J.H.J.H.LuCHEE-WEE LIU2007-04-192018-07-062007-04-192018-07-062003-12http://ntur.lib.ntu.edu.tw//handle/246246/200704191002825application/pdf126395 bytesapplication/pdfen-USMOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responsesjournal article10.1109/ISDRS.2003.1272213http://ntur.lib.ntu.edu.tw/bitstream/246246/200704191002825/1/01272213.pdf