Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gas

YANG-FANG CHENMING-YAU CHERN2018-09-102018-09-102000http://www.scopus.com/inward/record.url?eid=2-s2.0-0034274012&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/288637Epitaxial GaNxAs1-x layer formed by pulsed-laser irradiation of GaAs in an ambient nitrogen gasjournal article10.1088/0268-1242/15/9/3032-s2.0-0034274012WOS:000089238000004