Dai, J.-H.J.-H.DaiLee, J.-H.J.-H.LeeSI-CHEN LEE2020-06-112020-06-11200810411135https://scholars.lib.ntu.edu.tw/handle/123456789/498844https://www.scopus.com/inward/record.uri?eid=2-s2.0-85008010321&doi=10.1109%2fLPT.2007.912481&partnerID=40&md5=7b32a3e453adbc41025f76275acd8dfdThe correlation between the In(Ga)As quantum rings (QRs) and their precursors InAs quantum dots (QDs) are studied by changing the annealing time after the deposition of a thin InAs layer on GaAs. The atomic force microscopy and photolumines-cence (PL) are used to characterize the morphologies and elec-tronic states of QDs and QRs. The longer annealing time tends to enlarge the QD size to high aspect ratio, group InAs islands into several different sizes, and red-shift the PL peak. The resul-tant QRs show the ridge-confined rings and the PL peaks of QRs blue-shift with increasing QD aspect ratio. It demonstrates an im-portant way to tailor the electronics states of QRs. © 2008 IEEEAdatom migration; annealing time; elastic relax-ation; quantum dots (QDs); quantum rings (QRs)journal article10.1109/LPT.2007.9124812-s2.0-85008010321