國立臺灣大學電子工程學研究所林浩雄2006-07-262018-07-102006-07-262018-07-102005-10-31http://ntur.lib.ntu.edu.tw//handle/246246/20046本計畫以分子束磊晶法在砷化鎵基板上成 長銻砷化鎵/砷化鎵第二型量子井雷射，並 利用共振腔長度調整雷射波長。我們利用 雷射增益峰值對波長關係的模擬，藉著與 實驗資料的擬合來獲取銻砷化鎵/砷化鎵第 二型量子井能帶排列的關係以及銻砷化鎵 的能隙。我們獲致的GaAs0.64Sb0.36/GaAs量 子井主動層其GaAsSb之彎曲係數為 -1.31 eV，而價電帶差與能隙差比為1.02。這項 研究的結果用於銻砷化鎵光電元件的設 計，並可進一步研究溫度對雷射二極體特 性的影響。In this study, we fabricated GaAsSb/GaAs type-II quantum well (QW) lasers and analyzed the basic band structure of the GaAsSb/GaAs QW. Because of a peculiar band-bending effect in the QW, the emission wavelength of the laser has a blue-shift as the cavity length is shortened. We utilized this effect to investigate the band line-up of the GaAsSb/GaAs QW. Through a simulation for the self-consistent solutions for the Poisson and Schrödinger equations, the optical gain of GaAsSb/GaAs QW was calculated. By comparing the simulated blue-shift on the gain peak with the experimental results, we can obtain the band structure of GaAsSb/ GaAs QW. The best results after fitting: the valence band offset ratio (Qv) of the unstrained GaAs0.64Sb0.36/GaAs is 1.02, and the unstrained band-gap bowing parameter of GaAsSb is -1.31 eV. These results can be used in the design of GaAsSb optoelectronic devices and further studies on the thermal properties of GaAsSb lasers.application/pdf207420 bytesapplication/pdfzh-TW國立臺灣大學電子工程學研究所分子束磊晶含銻化合物半導體銻砷化鎵量子井能帶排列彎曲參數molecular beam epitaxySb-based compound semiconductorGaAsSb quantum wellband lineupbowing parameterreporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/20046/1/932215E002023.pdf