Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method

Chuang, K.-C.K.-C.ChuangHwu, J.-G.J.-G.HwuJENN-GWO HWU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-69549126285&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/347695Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization methodjournal article10.1016/j.mee.2009.03.038