Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

YA-PING CHIU2018-09-102018-09-102017http://juser.fz-juelich.de/record/826802http://scholars.lib.ntu.edu.tw/handle/123456789/399970[SDGs]SDG10Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopyjournal article10.1063/1.4972563