醫工所KANG, PEI-LEUNPEI-LEUNKANGLIN, JIA-YUJIA-YULINLEE, JINN-SHINGJINN-SHINGLEETANG, TZU-PIAOTZU-PIAOTANGHSU, CHUNG-KINGCHUNG-KINGHSULIN, FENG-HUEIFENG-HUEILIN2009-01-202018-06-292009-01-202018-06-292005http://ntur.lib.ntu.edu.tw//handle/246246/105199Thermal-heating chemical-vapor deposition has been used to synthesize Si3 N4 nanotubes by heating tetra-ethyl-ortho- silicate at 165°C to get vapor to flow in and providing nitrogen gas to the reaction chamber as the source of Si and N, respectively. A stainless-steel wire was coiled as entangled wire scaffold with a pore size of 1mm. The wire scaffold was placed in the middle part of the reaction chamber. Cr, Fe and Mo, contained in the stainless-steel, served as catalysts to provide in situ growth of Si3N4 nanotubes on the coil surface at a relative low reactant temperature (1000°C) through the vapor–liquid–solid growth mechanism. Most of the nanotubes are end-closed by a metallic particle. All the nanotubes were identified as α- Si3N4 in crystal structure.en-USSi3N4 nanotubeThermal-heating chemical-vapor depositionTetra-ethyl-ortho-silicateStainless-steel