Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>As

Chang, C.-H.C.-H.ChangChiou, Y.-K.Y.-K.ChiouChang, Y.-C.Y.-C.ChangLee, K.-Y.K.-Y.LeeLin, T.-D.T.-D.LinWu, T.-B.T.-B.WuMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272006https://scholars.lib.ntu.edu.tw/handle/123456789/443451Interfacial self-cleaning in atomic layer deposition of HfO<inf>2</inf> gate dielectric on In<inf>0.15</inf>Ga<inf>0.85</inf>Asjournal article10.1063/1.24053872-s2.0-33845892121https://www.scopus.com/inward/record.uri?eid=2-s2.0-33845892121&doi=10.1063%2f1.2405387&partnerID=40&md5=09aff2d17e467345136bbfb2f2055c95