Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxide

Ren, F.F.RenMINGHWEI HONGHobson, W.S.W.S.HobsonKuo, J.M.J.M.KuoLothian, J.R.J.R.LothianMannaerts, J.P.J.P.MannaertsKwo, J.J.KwoChu, S.N.G.S.N.G.ChuChen, Y.K.Y.K.ChenCho, A.Y.A.Y.Cho2019-12-272019-12-271997https://scholars.lib.ntu.edu.tw/handle/123456789/443495Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate oxidejournal article10.1016/S0038-1101(97)00181-02-s2.0-0031268958https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031268958&doi=10.1016%2fS0038-1101%2897%2900181-0&partnerID=40&md5=82f25543087709f6b4f1dc858fa6e673