XRD characterization for Al- and N-doped 3C-SiC on Si (100) substrate after pulsed excimer laser anneal

Lee, K.-Y.K.-Y.LeeHuang, Y.-H.Y.-H.HuangHuang, C.-F.C.-F.HuangChung, C.Y.C.Y.ChungLin, S.C.S.C.LinKUNG-YEN LEE2020-01-172020-01-172012https://scholars.lib.ntu.edu.tw/handle/123456789/451524XRD characterization for Al- and N-doped 3C-SiC on Si (100) substrate after pulsed excimer laser annealconference paper10.4028/www.scientific.net/MSF.717-720.4972-s2.0-84861416989https://www.scopus.com/inward/record.uri?eid=2-s2.0-84861416989&doi=10.4028%2fwww.scientific.net%2fMSF.717-720.497&partnerID=40&md5=77b89d76a5903fbcf916ff7e1f62aecc