Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships

Lee, C.-C.C.-C.LeeHsieh, C.-P.C.-P.HsiehHuang, P.-C.P.-C.HuangCheng, S.-W.S.-W.ChengLiao, M.-H.M.-H.LiaoMING-HAN LIAO2020-01-132020-01-132016https://scholars.lib.ntu.edu.tw/handle/123456789/447954[SDGs]SDG7Ge<inf>1 - X</inf>Si<inf>x</inf> on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationshipsjournal article10.1016/j.tsf.2015.08.0512-s2.0-84940982731https://www.scopus.com/inward/record.uri?eid=2-s2.0-84940982731&doi=10.1016%2fj.tsf.2015.08.051&partnerID=40&md5=09e83753e8d2796519bec1570427c69e