Lin G.-W.Jiang Y.-H.Kao P.-K.Chiu I.-C.Wu Y.-H.Hsu C.-C.Cheng I.-C.I-CHUN CHENGJIAN-ZHANG CHEN2019-09-262019-09-26201520531591https://scholars.lib.ntu.edu.tw/handle/123456789/425315Weinvestigated the oxidation of sputtered metallic Sn thin films annealed byN 2 atmospheric pressure plasma jets (APPJs) with and without the introduction of ambient air to the reaction. As the APPJ annealing duration increased, the metallic Sn first oxidized into SnO, and then, a metallic Sn phase reappeared owing to the disproportionation reaction 4Sn¡÷Sn 3 O 4 +Sn¡÷2Sn + 2SnO 2 . The involvement ofO2 from the ambient air led to more reactive oxidation of the thin films. APPJ annealing increased the band gap to?2.6-2.7 eV. All the annealed films show conductivity with unstable readings of carrier types because of the mixed phases of Sn, SnO, and possibly, some SnO 2 in the films. ? 2015 IOP Publishing Ltd.Atmospheric pressure plasma jetOxidationSnjournal article10.1088/2053-1591/2/1/0165042-s2.0-84930623565https://www2.scopus.com/inward/record.uri?eid=2-s2.0-84930623565&doi=10.1088%2f2053-1591%2f2%2f1%2f016504&partnerID=40&md5=64949419ec9a734971f6ade6a0e1df08