Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices

CHEE-WEE LIUWei, J.-Y.J.-Y.WeiMaikap, S.S.MaikapLee, M.H.M.H.LeeLee, C.C.C.C.LeeCHEE-WEE LIU2018-09-102018-09-102006http://www.scopus.com/inward/record.url?eid=2-s2.0-32344445676&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/324163Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devicesjournal article10.1016/j.sse.2005.10.032